丝印代码：R5050E；REF50xx Low-Noise, Very Low Drift, Wide VIN Precision Voltage Reference

1 Features • Low temperature drift (maximum): – Enhanced-grade (New): 2.5ppm/°C – High-grade: 3ppm/°C – Standard-grade: 8ppm/°C • High accuracy (maximum): – Enhanced-grade: 0.025% – High-grade: 0.05% – Standard-grade: 0.1% • Low noise: – Enhanced-grade: 0.5μVPP/V – High/Stan

丝印代码：R5050E；REF50xx Low-Noise, Very Low Drift, Wide VIN Precision Voltage Reference

1 Features • Low temperature drift (maximum): – Enhanced-grade (new): 2.5ppm/°C – High-grade: 3ppm/°C – Standard-grade: 8ppm/°C • High accuracy (maximum): – Enhanced-grade: 0.025% – High-grade: 0.05% – Standard-grade: 0.1% • Low noise: – Enhanced-grade: 0.5μVPP/V – High/stan

丝印代码：R5050E；REF50xx Low-Noise, Very Low Drift, Wide VIN Precision Voltage Reference

1 Features • Low temperature drift (maximum): – Enhanced-grade (new): 2.5ppm/°C – High-grade: 3ppm/°C – Standard-grade: 8ppm/°C • High accuracy (maximum): – Enhanced-grade: 0.025% – High-grade: 0.05% – Standard-grade: 0.1% • Low noise: – Enhanced-grade: 0.5μVPP/V – High/stan

声表谐振器(无源)

声表谐振器(无源)

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages