丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

丝印代码：R103GA；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: d

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: d