4 - PIN POWER LED

DESCRIPTION This low profile, 4-pin LED provides a more uniform and evenly distributed illumination than existing LED designs. Its unique optical package enables designers to utilize fewer LEDs while achieving superior lighting performance. FEATURES • AllnGaP (Aluminum Indium Gallium Ph

4 - PIN POWER LED

4 - PIN POWER LED

DESCRIPTION This low profile, 4-pin LED provides a more uniform and evenly distributed illumination than existing LED designs. Its unique optical package enables designers to utilize fewer LEDs while achieving superior lighting performance. FEATURES • AllnGaP (Aluminum Indium Gallium Ph

4 - PIN POWER LED

DESCRIPTION This low profile, 4-pin LED provides a more uniform and evenly distributed illumination than existing LED designs. Its unique optical package enables designers to utilize fewer LEDs while achieving superior lighting performance. FEATURES • AllnGaP (Aluminum Indium Gallium Ph

4 - PIN POWER LED

DESCRIPTION This low profile, 4-pin LED provides a more uniform and evenly distributed illumination than existing LED designs. Its unique optical package enables designers to utilize fewer LEDs while achieving superior lighting performance. FEATURES • AllnGaP (Aluminum Indium Gallium Ph

4 - PIN POWER LED

DESCRIPTION This low profile, 4-pin LED provides a more uniform and evenly distributed illumination than existing LED designs. Its unique optical package enables designers to utilize fewer LEDs while achieving superior lighting performance. FEATURES • InGaN (Indium Gallium Nitride) tech

4 - PIN POWER LED

DESCRIPTION This low profile, 4-pin LED provides a more uniform and evenly distributed illumination than existing LED designs. Its unique optical package enables designers to utilize fewer LEDs while achieving superior lighting performance. FEATURES • AllnGaP (Aluminum Indium Gallium Ph

封装/外壳：4-DIP（0.200"，5.08mm） 包装：散装 描述：LED RED POWER LED T/H 光电器件 LED 指示 - 分立

封装/外壳：4-DIP（0.200"，5.08mm） 包装：散装 描述：LED COOL WHITE POWER LED T/H 光电器件 LED 指示 - 分立

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

COPS Family Users Guide Table of Contents

文件：8.5059 Mbytes Page：79 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages