RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF321 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES: • Class C Operation • PG = 10 dB at 10 W/400 MHz • Omnigold™ Metalization System

The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V

The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. ● Guaranteed performance at 400 MHz, 28 Vdc Output power = 10 W Power gain = 12 dB min. Efficiency = 50 min. ●

NPN Silicon RF power transistor

Description: MRF321 is designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

Bipolar

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. ·Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min.\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc\n·Computer–controlled wirebonding gives consistent input Impedance\n·Gold Metallization System for High R;

The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V

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封装/外壳：244-04 包装：托盘 描述：RF TRANS NPN 33V 244-04 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER TRANSISTOR NPN SILICON

Trans GP BJT NPN 33V 1.5A 4-Pin Case 244-04

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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COPS Family Users Guide Table of Contents

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Low Power Single Op Amp

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Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages