Fiwld Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (m

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

High-Speed Switching Applications

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