4 AND 5 KEY QTOUCH SENSOR ICs

文件：718.26 Kbytes Page：14 Pages

4 AND 5 KEY QTOUCH SENSOR ICs

文件：718.26 Kbytes Page：14 Pages

4 AND 5 KEY QTOUCH SENSOR ICs

文件：718.26 Kbytes Page：14 Pages

封装/外壳：28-SSOP（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC SENSOR 4KEY 5V 5MA SGL 28SSOP 集成电路（IC） 传感器，电容式触控

IC SENSOR 4KEY 5V 5MA SGL 28SSOP

0.5-7.0V; 20mA; 4 and 5 key QTouch sensor IC. For industrial panels, security systems, access systems, pointing devices, PC peripherals, backlighted buttons

4 AND 5 KEY QTOUCH SENSOR ICs

文件：718.26 Kbytes Page：14 Pages

封装/外壳：28-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：SENSOR IC 4-CH 5V 5MA SGL 28-DIP 集成电路（IC） 传感器，电容式触控

IC SENSOR 4KEY 5V 5MA SGL 28DIP

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP