CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bearin

CHARGE-TRANSFER TOUCH SENSOR

CHARGE-TRANSFER TOUCH SENSOR

文件：343.13 Kbytes Page：12 Pages

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：INTEGRATEDCIRCUIT 集成电路（IC） 传感器，电容式触控

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：SENSOR IC TOUCH/PROXMTY 1CH 8DIP 集成电路（IC） 传感器，电容式触控

CHARGE-TRANSFER TOUCH SENSOR

文件：343.13 Kbytes Page：12 Pages

CHARGE-TRANSFER TOUCH SENSOR

文件：343.13 Kbytes Page：12 Pages

0.5-6.5V; 20mA; charge-transfer touch sensor. For light switches, industrial panels, appliance control, security systems, access systems, pointing devices, elevator buttoms, toys & games

CHARGE-TRANSFER TOUCH SENSOR

文件：343.13 Kbytes Page：12 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages