CHARGE-TRANSFER TOUCH SENSOR

The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It will project a proximity sense field through air, via almost any dielectric, like glass, plastic, stone, ceramic, and most kinds of wood. It can also turn small metal-bear

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：SENSOR IC TOUCH/PROXMTY 1CH8SOIC 集成电路（IC） 传感器，电容式触控

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC SENSOR TOUCH/PROX 1CHAN 8SOIC 集成电路（IC） 传感器，电容式触控

CHARGE-TRANSFER TOUCH SENSOR

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PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages