PLASTIC SILICON INFRARED PHOTOTRANSISTOR

Description The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic side looker package. Features ■ NPN Silicon Phototransistor ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Daylight Filter ■ Black

Plastic Silicon Infrared Phototransistor

文件：80.74 Kbytes Page：4 Pages

封装/外壳：径向，侧视图 描述：SENSOR PHOTO 880NM SIDE VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

PLASTIC SILICON INFRARED PHOTOTRANSISTOR

Plastic Silicon Infrared Phototransistor

Description The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. Features ■ NPN Silicon Phototransistor ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Daylight Filter ■ Clean

Plastic Silicon Infrared Phototransistor

文件：80.74 Kbytes Page：4 Pages

封装/外壳：径向，侧视图 描述：SENSOR PHOTO 880NM SIDE VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

文件：325.65 Kbytes Page：21 Pages