OPTOLOGIC?

Description The QSE15X family are OPTOLOGIC® ICs which feature a Schmitt trigger at output which provides hyster esis for noise immunity and pulse shaping. The basic building block of this IC consists of a photodiode, a linear amplifier, voltage regulator, Schmitt trigger and four output option

QSE159 - 红外 检测器

The QSE159 is an plastic silicon OPTOLOGIC® Photosensor features a Schmitt trigger at output which provides hysteresis for noise immunity and pulse shaping. The basic building block of this IC consists of a photodiode, a linear amplifier, voltage regulator, Schmitt trigger and four output options. T ·Bipolar silicon IC\n·Medium wide reception angle, 50°\n·Matched emitter - QEE113/QEE123\n·Daylight filter\n·High sensitivity\n·Direct TTL/LSTTL interface;

塑料硅 OPTOLOGIC 光电传感器

QSE15X 系列是在输出处配有施密特触发器的 OPTOLOGIC® IC，该触发器为抗噪能力和脉冲整形提供滞后。本IC的基本构件块由一个光电二极管、一个线性放大器、稳压器、施密特触发器和四个输出选件组成。在4.5-16.0伏对应的电源电流范围内，TTL/LSTTL兼容输出可驱动多达十个TTL负载。这些器件都标有便于识别的彩色条纹。 •双极硅 IC\n•封装类型：侧面可视封装\n•中等宽接收角，50°\n•封装材料和颜色：黑色环氧树脂\n•还提供透明包装：“C”后缀\n•匹配发射极：QEE113/QEE123\n•日光过滤器\n•高灵敏度\n•直接的 TTL/LSTTL 接口;

PLASTIC SILICON OPTOLOGIC PHOTOSENSOR

文件：532.25 Kbytes Page：7 Pages

Plastic Silicon OPTOLOGIC Photosensor

文件：222.95 Kbytes Page：7 Pages

OPTOLOGIC

文件：262.089 Kbytes Page：4 Pages

封装/外壳：3-SIP，侧视图 包装：散装 描述：IC SENSOR INV OPEN-COLL SIDELOOK 传感器，变送器 光学传感器 - 光检测器 - 逻辑输出

Plastic Silicon OPTOLOGIC Photosensor

文件：222.95 Kbytes Page：7 Pages

封装/外壳：3-SIP，侧视图 包装：散装 描述：PHOTOSENSOR INVERTER-OUT BLUE 传感器，变送器 光学传感器 - 光检测器 - 逻辑输出

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

POWER TRANSISTOR NPN SILICON

Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Ratin

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

Silicon epitaxial planar type

文件：49.72 Kbytes Page：2 Pages