High-Speed CMOS Dual Bus Switch with IndiviDual Active Low Enables

The QS3306A provides a set of two high-speed low resistance (3 ohm typical) CMOS switches connecting inputs to outputs without propagation delay and without generating additional ground bounce noise. Individual enables (OE) are used to turn on the switches. The QS3306A is ideal for signal and contro Enhanced N channel FET with no inherent diode to Vcc\nVery low ON resistance (5 ohm typical)\nZero propagation delay, zero added ground bounce\nFast turn-on/turn-off time\nUndershoot clamp diodes on all switch and control inputs\nAvailable in 8 pin SOIC package;

QUICKSWITCH® PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES

FEATURES: • Enhanced N channel FET with no inherent diode to Vcc • Very low ON resistance (5Ω typical) • Zero propagation delay, zero added ground bounce • Fast turn-on/turn-off time • Undershoot clamp diodes on all switch and control inputs • Available in SOIC package APPLICATIONS: • Line

QUICKSWITCH® PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES

FEATURES: • Enhanced N channel FET with no inherent diode to Vcc • Very low ON resistance (5Ω typical) • Zero propagation delay, zero added ground bounce • Fast turn-on/turn-off time • Undershoot clamp diodes on all switch and control inputs • Available in SOIC package APPLICATIONS: • Line

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL

文件：212.56 Kbytes Page：5 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUS SWITCH 1 X 1:1 8SOIC 集成电路（IC） 信号开关，多路复用器，解码器

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL

文件：212.56 Kbytes Page：5 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC BUS SWITCH 1 X 1:1 8SOIC 集成电路（IC） 信号开关，多路复用器，解码器

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDSon)=5Ω

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * RDS(on)= 5Ω * 60 Volt VDS

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F

DUAL FET BUS SWITCH

文件：62.11 Kbytes Page：4 Pages