Diode Rectifier-FRED

分立

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Diode Rectifier-FRED

分立

Diode Rectifier-FRED

分立

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：PLANAR STRUCTURED SUPERFAST RECO 分立半导体产品 二极管 - 整流器 - 单

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

Planar structure with EPI wafer

文件：262.25 Kbytes Page：7 Pages

封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR） 描述：ITO-220AC, FRED 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(8.0A,150-200V,60W)

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)