600 um Discrete GaAs pHEMT

Product Overview The Qorvo QPD2060D is a discrete 600 micron pHEMT which operates from DC to 20 GHz. The QPD2060D is fabricated using Qorvo’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high d

DC - 20 GHz, 600 um Discrete GaAs pHEMT Die

Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 28 dBm\n• Typical Gain at 12 GHz: 12 dB\n• Typical PAE at 12 GHz: 55%\n• Typical NF at 12 GHz: 1.4 dB\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n• Chip Dimensions: 0.41 x 0.34 x 0.10 mm;

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

QUAD OPERATIONAL AMPLIFIER?

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QUAD OPERATIONAL AMPLIFIER?

文件：231.91 Kbytes Page：6 Pages