65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor

Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics • Frequency range: DC - 3.7GHz\n• Output power (P3dB): 70 W at 2 GHz\n• Linear gain: 20 dB typical at 2 GHz\n• Typical PAE3dB: 74 % at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package;

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor

Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionic • Frequency range: DC - 3.7GHz\n• Linear gain: 20 dB typical at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n;

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices