65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor

15 Watts, 50 Volts Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistanc

15 Watts, 50 Volts Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junct

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

Cushion-Mount??Plus Plate Mounting Tapes

文件：309.03 Kbytes Page：4 Pages

Cushion-Mount??Plus Plate Mounting Tapes

文件：309.03 Kbytes Page：4 Pages