150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

DC - 2.7 GHz, 150 Watt, 65 V GaN RF Transistor

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz.  This is a single stage unmatched power amplifier transistor in an over-molded plastic package.  The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC • Frequency Range: DC - 2.7 GHz\n• Output Power (P3dB): 178 W at 1.8 GHz\n• Linear Gain: 21.8 dB typical at 1.8 GHz\n• Typical PAE3dB: 64.8 % at 1.8 GHz\n• Operating voltage: 65V\n• Low thermal resistance package\n• CW and Pulse capable\n• 7.2 x 6.6 mm package;

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

文件：2.40828 Mbytes Page：25 Pages

150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

文件：2.40828 Mbytes Page：25 Pages

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

文件：2.40828 Mbytes Page：25 Pages

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

文件：2.40828 Mbytes Page：25 Pages

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

文件：2.40828 Mbytes Page：25 Pages

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FOR OPTICAL INFORMATION SYSTEM?

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