150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

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FOR OPTICAL INFORMATION SYSTEM?

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