125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

EV Board

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

Wire Wound

文件：1.06406 Mbytes Page：5 Pages

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifiers

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PRI TRANSFORMERS Reinforced Insulation

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