125W, 50V, DC – 3.2 GHz, GaN RF Transistor

Product Features • Frequency: DC to 3.2 GHz • Output Power (P3dB)1: 162 W • Linear Gain1: 17.5 dB • Typical DEFF3dB 1: 74 • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor

Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionic • Frequency range: DC - 3.2 GHz\n• Output power (P3dB): 162 W at 2 GHz\n• Linear gain: > 17 dB typical at 2 GHz\n• Typical PAE3dB: > 70 % at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package;

125W, 50V, DC – 3.2 GHz, GaN RF Transistor

Product Features • Frequency: DC to 3.2 GHz • Output Power (P3dB)1: 162 W • Linear Gain1: 17.5 dB • Typical DEFF3dB 1: 74 • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable Note: 1 @ 2 GHz

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor

Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avioni • Frequency range: DC - 3.2GHz\n• Linear gain: > 17 dB typical at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n;

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

EV Board

EV Board

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

125W, 50V, DC – 3.2 GHz, GaN RF Transistor

Product Features • Frequency: DC to 3.2 GHz • Output Power (P3dB)1: 162 W • Linear Gain1: 17.5 dB • Typical DEFF3dB 1: 74 • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable Note: 1 @ 2 GHz

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A)

SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEA TURES l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installation l Plastic package has Underwriter Laboratory

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages