N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-Channel 100V Fast Switching MOSFET

N-Channel MOSFET uses advanced trench technology

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Mini LTCC RF Diplexer for Bluetooth, Wi-Fi, UWB

Features •Supporting 2400~2500 / 6200~8200 MHz Simultaneously •Small Form Factor 1.6 x 0.8 x 0.6 mm •Low Insertion Loss 1.0 dB •High Isolation Between Bands •Temperature Stability Across Wide Temperature Bands •High-Power Handling up to 3W •RoHS Compliant

Mini LTCC RF Diplexer for Bluetooth, Wi-Fi, UWB

Features •Supporting 2400~2500 / 6200~8200 MHz Simultaneously •Small Form Factor 1.6 x 0.8 x 0.6 mm •Low Insertion Loss 1.0 dB •High Isolation Between Bands •Temperature Stability Across Wide Temperature Bands •High-Power Handling up to 3W •RoHS Compliant

low-loss, compact, and economical surface-acoustic-wave (SAW)

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surface-acoustic-wave (SAW) resonator

文件：65.92 Kbytes Page：3 Pages

true one-port, surface-acoustic-wave (SAW) resonator

文件：62.78 Kbytes Page：3 Pages