PLASTIC INFRARED LIGHT EMITTING DIODE

Description The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package. Features ■ Wavelength = 940 nm, GaAs ■ Package Type: Sidelooker ■ Medium Beam Angle, 50° ■ Clear Plastic Package ■ Matched Photosensors: QSE213 and QSE243

Plastic Infrared Light Emitting Diode

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封装/外壳：径向，侧视图 包装：散装 描述：EMITTER IR 940NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

PLASTIC INFRARED LIGHT EMITTING DIODE

Plastic Infrared Light Emitting Diode

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Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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