PLASTIC INFRARED LIGHT EMITTING DIODE

Description The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. Features ■ λ= 880 nm ■ Chip material = AlGaAs ■ Package type: Plastic TO-46 ■ Matched Photosensor: QSD722/723/724 ■ Medium Wide Emission Angle, 30° ■ High Output Power ■ Packa

Plastic Infrared Light Emitting Diode

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AIGAAS INFRARED EMITTING DIODE

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封装/外壳：TO-46-2 包装：散装 描述：EMITTER IR 880NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

AIGAAS INFRARED EMITTING DIODE

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz