Q25系列直角底座固定式方形传感器

\n\n• Features EZ-BEAM technology, with specially designed optics and electronics for reliable sensing without the need for adjustments\n\n• Completely epoxy-encapsulated to provide superior durability, even in harsh sensing environments\n\n• Features rectangular 25 mm plastic housing with 18 mm thr

包装：盒 描述：EZ-BEAM Q25 SERIES: EMITTERR 传感器，变送器 光学传感器 - 光电，工业

Q25系列直角底座固定式方形传感器

\n\n• Features EZ-BEAM technology, with specially designed optics and electronics for reliable sensing without the need for adjustments\n\n• Completely epoxy-encapsulated to provide superior durability, even in harsh sensing environments\n\n• Features rectangular 25 mm plastic housing with 18 mm thr

包装：盒 描述：PHOTO SEN EMITTER FIXED 20M 传感器，变送器 光学传感器 - 光电，工业

PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)