位置:QJD1210011 > QJD1210011详情
QJD1210011中文资料
QJD1210011数据手册规格书PDF详情
Description:
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
□ Junction Temperature: 175°C
□ Silicon Carbide Chips
□ Low Internal Inductance
□ Industry Leading RDS(on)
□ High Speed Switching
□ Low Switching Losses
□ Low Capacitance
□ Low Drive Requirement
□ Fast 100A Free Wheeling Schottky Diode
□ High Power Density
□ Isolated Baseplate
□ Aluminum Nitride Isolation
□ 2 Individual Switches per Module
□ AlSiC Baseplate
□ RoHS Compliant
Applications:
□ Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances
□ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics
□ High Temperature Power Systems such as: Power Electronics in Electric Vehicle and Aviation Systems
QJD1210011产品属性
- 类型
描述
- 型号
QJD1210011
- 制造商
Powerex Power Semiconductors
- 功能描述
SILICON CARBIDE TRANSISTOR
- 制造商
Powerex Power Semiconductors
- 功能描述
SILICON CARBIDE POWER TRANSISTORS/MODULES
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Powerex Inc. |
25+ |
模块 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Powerex Inc. |
22+ |
Module |
9000 |
原厂渠道,现货配单 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271768邹小姐 |
|||
INTEL |
22+ |
NA |
2000 |
原装正品支持实单 |
|||
INTEL |
08+ |
BGA |
8 |
||||
INTEL |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
INTEL/英特尔 |
BGA |
1000 |
只做原装,库存和价格请咨询为准 |
||||
INTEL |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INTEL/英特尔 |
23+ |
BGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
英特尔 |
BGA |
19 |
原装正品仓库现货 可看货支持实单! |
QJD1210011 资料下载更多...
QJD1210011 芯片相关型号
- 08055C103KAT2A
- 2SD1203T-H
- 489D686X06R3D2B
- 489D686X06R3D6BE3
- 90779-0910
- 90779-3003
- 90779-7902
- 90814-0614
- 90814-0910
- 90814-3708
- C0805C103D2UAC
- CD4020BNSRE4
- CD4024BPWRG4
- EMH2412-TL-H
- EMK107F224ZA
- EMK107F225ZA
- GRJ313B11H102KA01D
- ISO122
- LMV358DR
- NA556N
- RFFC5071TR7
- RFFC5072SQ
- RJF7PE1N15100BTX
- RK73H1EGTBL1002D
- RK73H2ATTPL1002D
- RWM041048R7FR15AD7E1
- TMK107BJ105A
- TMK212BJ225G
- TSV994AIPT
- WSR5LJTA
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
Powerex Power Semiconductors
Powerex成立于1986年1月1日,是通用电气公司和西屋电气公司(Westinghouse Electric Corporation)功率半导体部门合并的结果。为了向未来发展,三菱电机在Powerex中建立了股权投资。 1994年,西屋将其股份出售给通用电气和三菱电机,目前两者平分Powerex的股份。公司总部位于宾夕法尼亚州Youngwood。 Powerex 是一家领先的高功率半导体解决方案供应商,致力于提供离散器件、模块及集成电路,服务于工业、可再生能源和电动汽车等多个领域。其产品线涵盖绝缘栅双极晶体管(IGBTs)、高压IGBT、整流器、晶闸管及定制功率模块等,为客户提供高效和可靠