DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry improves power sharing and reduces thermal resistance

• Internal input and output matching networks for an easy circuit design.

APPLICATIONS

• Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applications.