DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

FEATURES

• Suitable for short and medium pulse applications up to 1 ms pulse width, 10 duty factor

• Diffused emitter ballasting resistors improve ruggedness

• Interdigitated emitter-base structure provides high emitter efficiency

• Gold metallization with barrier realizes very stable characteristics and excellent lifetime

• Multicell geometry improves power sharing and reduces thermal resistance

• Internal input and output prematching networks allow an easier design of circuits.

APPLICATIONS

Intended for use in common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band.