DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

FEATURES

• Very high power gain

• Internal input prematching network

• Diffused emitter ballasting resistors improve ruggedness

• Interdigitated emitter-base structure

• Gold metallization with barrier layer to prevent electromigration and gold diffusion during life

• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS

Common-base, class C power amplifiers at frequencies up to 2.3 GHz.