S OT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Voltage and High Current ● General Purpose Amplifier Applications

SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and High Current General Purpose Amplifier Applications

NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • Medium power switching in e.g. telephony and professional communication.

NPN General Purpose Amplifier

Features • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12.

AMPLIFIER TRANSISTOR

FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW

NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05.

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA63, PZTA64 (PNP)

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA 63 PZTA 64 (PNP)

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA 63 PZTA 64 (PNP)

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A.

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA63, PZTA64 (PNP)

Darlington NPN Silicon Planar Epitaxial Transistor

Darlington NPN Silicon Planar Epitaxial Transistor P/b Lead(Pb)-Free

DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC(MAX) = 1W

NPN Darlington transistor

Epitaxial Planar Transistor

Description The PZTA14 is darlington amplifier transistor designed for applications requiring extremely high current gain.

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complement: PZTA64. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • Pre-amplifiers requiring high input impedance.

NPN Darlington transistor

FEATURES •High current (max. 500 mA) •Low voltage (max. 30 V). APPLICATIONS •Pre-amplifiers requiring high input impedance. DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complement: PZTA64.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High current (max. 500 mA) ● Low voltage (max. 30 V). ● Pre-amplifiers requiring high input impedance.

SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. •

NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device is designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. • See MPSA28 for characteristics.

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

NPN Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from process 03. Features • These are Pb−Free Devices

Applications requiring extremely high current gain at collector currents to 500mA

NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03.

NPN Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from process 03. Features • These are Pb−Free Devices

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC= 0.1A APPLICATIONS · Low current high speed switching applications · Low power audio amplifier

NPN Silicon High-Voltage Transistors

NPN Silicon High-Voltage Transistors ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: PZTA 92, PZTA 93 (PNP)

NPN High Voltage Amplifier

NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48.

NPN Silicon High Voltage Transistor

NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types; PZTA 92, PZTA 93 (PNP)

NPN Silicon Planar Epitaxial Transistor

NPN Silicon Planar Epitaxial Transistor p/b Lead(Pb)-Free

HIGH VOLTAGE TRANSISTOR

DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) VCEO=200V (UTC PZTA43) * High current gain * Complement to UTC PZTA92/93

SMD High Voltage NPN Transistors

Features High collector-emitter voltage High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Dat

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR For use in Telephony and Professional Communication Equipment Complementary PZTA92

Plastic-Encapsulate Transistors

FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92(PNP)

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA92(PNP)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Voltage Driver Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF • Marking: ZTA4

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA92(PNP)

NPN high-voltage transistor

DESCRIPTION NPN high-voltage transistor in a SOT223 plastic package. PNP complement: PZTA92. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

NPN high-voltage transistor

Epitaxial Planar Transistor

Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone.

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES • Complementary to PZTA92.

NPN high-voltage transistor

FEATURES •Low current (max. 100 mA) •High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT223 plastic package. PNP complement: PZTA92.

NPN Silicon Planar Epittaxial Transistor

NPN Silicon Planar Epitaxial Transistor p/b Lead(Pb)-Free

SOT-223 Plastic-Encapsulate Transistors

FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)

Plastic-Encapsulate Transistors

FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)

NPN high voltage transistor

1. General description NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: PZTA92-Q 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive app

HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

High Voltage Transistor Surface Mount NPN Silicon

NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

High Voltage Transistor Surface Mount NPN Silicon

High Voltage Transistor Surface Mount

High Voltage Transistor Surface Mount NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

NPN Silicon High-Voltage Transistors

NPN Silicon High-Voltage Transistors ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: PZTA 92, PZTA 93 (PNP)

HIGH VOLTAGE TRANSISTOR

DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) VCEO=200V (UTC PZTA43) * High current gain * Complement to UTC PZTA92/93

NPN high-voltage transistor

DESCRIPTION High voltage NPN transistor in a 4-lead SOT223 surface mounting package, especially suitable for use in telecommunications applications. FEATURES • High voltage • High current.

NPN Silicon Planar Epitaxial Transistor

NPN Silicon Planar Epitaxial Transistor

HIGH VOLTAGE TRANSISTOR

■ FEATURES * Collector-emitter voltage: VCEO=400V(PZTA44) VCEO=350V(PZTA45) * Collector current up to 300mA * Complement to PZTA94/93 ■ APPLICATION * Telephone switching * High voltage switch

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES . RoHS Compliant Product . Low Current ICM : 300 mA (Max.) . High Voltage VCEO : 400 V

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES • High Breakdown Voltage. • Collector Power Dissipation : PC=2W(TC=25°C )

NPN high-voltage transistor

SMD High Voltage NPN Transistors

Features High collector-emitter voltage High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Dat

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low current : 300mA(max) ● High voltage: VCEO=400V

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Voltage Driver Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF • Marking: ZTA44

NPN TRANSISTOR

NPN TRANSISTOR FEATURES ● Low current : 300mA(max) ● High voltage: VCEO=400V