Suface Mount Si-Epitaxial Planar Switching Transistors

Power dissipation 1.3 W Plastic case SOT-223 Weight approx. 0.04 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

NPN Silicon Switching Transistors

NPN Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: PZT 2907 (PNP) PZT 2907A (PNP)

SOT-223 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A)

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

NPN Transistors

■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A

General Purpose Transistor

FEATURES Power dissipation PCM:1 W (Tamb=25°C) Collector current ICM :0.6 A Collector-base voltage V(BR)CBO :75V Operating and storage junction temperature range TJ,Tstg: -55°C to +150°C

Power dissipation

FEATURES Power dissipation PCM:1 W (Tamb=25°C) Collector current ICM :0.6 A Collector-base voltage V(BR)CBO :75V Operating and storage junction temperature range TJ,Tstg: -55°C to +150°C

NPN switching transistor

FEATURES •High current (max. 600 mA) •Low voltage (max. 40 V). APPLICATIONS •Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A.

Plastic-Encapsulate Transistors

FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

GENERAL PURPOSE TRANSISTORS

DESCRIPTION The PZT2222A is available in SOT 223 p ackage FEATURES  P ower Dissipation PCM : 1W (Tamb=25 °C  Collector Current ICM : 0.6A  Collector Base Voltage V(BR)CBO : 75V  Operating and Storage Junction Temperature Range TJ , T STG : 55 °C to 150 °C  Availabl e in SOT 223

NPN Silicon Switching Transistors

NPN Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: PZT 2907 (PNP) PZT 2907A (PNP)

Suface Mount Si-Epitaxial Planar Switching Transistors

Power dissipation 1.3 W Plastic case SOT-223 Weight approx. 0.04 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

NPN switching transistor

FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A.

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

NPN Plastic-Encapsulate Transistors

Features • Surface Mount SOT-223 Package • Capable of 1Watts of Power Dissipation • Ic:0.6A • Marking:ZT2222A • Operating and Storage Junction Temperatures:-55°C to 150°C • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by add

NPN Silicon Planar Epitaxial Transistor

NPN Silicon PlanarEpitaxial Transistor P/b Lead(Pb)-Free

NPN switching transistor

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

NPN General-Purpose Amplifier

Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or

NPN General-Purpose Amplifier

Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

Silicon Planar Medium Power Transistor

DESCRIPTION Epitaxial Planar Die Construction.

NPN Epitaxial Planar Transistor

Features • High current, max. 600mA • Low voltage, max. 40V • Pb-free package Applications • Switching and linear amplification

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or

NPN General Purpose Amplifier

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NPN Silicon Epitaxial Planar Transistor

晶体管

NPN 双极晶体管

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN GENERAL PURPOSE AMPLIFIER

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high Current Toroid Inductors

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