PZT2222价格

参考价格:¥0.4516

型号:PZT2222A 品牌:Fairchild 备注:这里有PZT2222多少钱,2025年最近7天走势,今日出价,今日竞价,PZT2222批发/采购报价,PZT2222行情走势销售排行榜,PZT2222报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PZT2222

NPNSiliconSwitchingTransistors

NPNSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:PZT2907(PNP) PZT2907A(PNP)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS
PZT2222

SufaceMountSi-EpitaxialPlanarSwitchingTransistors

Powerdissipation1.3W PlasticcaseSOT-223 Weightapprox.0.04g PlasticmaterialhasULclassification94V-0 Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

Diotec

NPNswitchingtransistor

ETC

知名厂家

GeneralPurposeTransistor

FEATURES Powerdissipation PCM:1W(Tamb=25°C) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:75V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNswitchingtransistor

FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. DESCRIPTION NPNswitchingtransistorinaSOT223plasticpackage. PNPcomplement:PZT2907A.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

NPNSiliconPlanarEpitaxialTransistor

NPNSiliconPlanarEpitaxialTransistor P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SufaceMountSi-EpitaxialPlanarSwitchingTransistors

Powerdissipation1.3W PlasticcaseSOT-223 Weightapprox.0.04g PlasticmaterialhasULclassification94V-0 Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

Diotec

SOT-223Plastic-EncapsulateTransistors

FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(PZT2907A)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-223Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(PZT2907A)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

Plastic-EncapsulateTransistors

FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(PZT2907A)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH

NPNSiliconPlanarEpitaxialTransistor

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. Features •PNPComplementisPZT2907AT1 •TheSOT−223PackageCanbeSolderedUsingWaveor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNPlastic-EncapsulateTransistors

Features •SurfaceMountSOT-223Package •Capableof1WattsofPowerDissipation •Ic:0.6A •Marking:ZT2222A •OperatingandStorageJunctionTemperatures:-55°Cto150°C •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequestbyadd

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(PZT2907A)

FS

First Silicon Co., Ltd

FS

Powerdissipation

FEATURES Powerdissipation PCM:1W(Tamb=25°C) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:75V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

GENERALPURPOSETRANSISTORS

DESCRIPTION The PZT2222AisavailableinSOT223package FEATURES PowerDissipation PCM:1W(Tamb=25°C CollectorCurrent ICM:0.6A CollectorBaseVoltage V(BR)CBO:75V OperatingandStorageJunctionTemperature Range TJ,TSTG:55°Cto150°C AvailableinSOT223

AITSEMIAiT Semiconductor Inc.

创瑞科技AiT创瑞科技

AITSEMI

NPNTransistors

■Features ●Epitaxialplanardieconstruction ●ComplementarytoPZT2907A

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNswitchingtransistor

FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. DESCRIPTION NPNswitchingtransistorinaSOT223plasticpackage.PNPcomplement:PZT2907A.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPNSiliconEpitaxialPlanarTransistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC

NPNSiliconSwitchingTransistors

NPNSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:PZT2907(PNP) PZT2907A(PNP)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconPlanarMediumPowerTransistor

DESCRIPTION EpitaxialPlanarDieConstruction.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNEpitaxialPlanarTransistor

Features •Highcurrent,max.600mA •Lowvoltage,max.40V •Pb-freepackage Applications •Switchingandlinearamplification

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SOT-223PACKAGENPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconPlanarEpitaxialTransistor

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. Features •PNPComplementisPZT2907AT1 •TheSOT−223PackageCanbeSolderedUsingWaveor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTORSURFACEMOUNT

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •PNPComplementisPZT2907AT1 •TheSOT-223packagecanbesolderedusingwaveorreflow. •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconPlanarEpitaxialTransistor

ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. Features •PNPComplementisPZT2907AT1 •TheSOT−223PackageCanbeSolderedUsingWaveor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNGENERALPURPOSEAMPLIFIER

文件:276.18 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNGeneralPurposeAmplifier

文件:212.72 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNGeneralPurposeAmplifier

文件:180.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

NPNGENERALPURPOSEAMPLIFIER

文件:276.18 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNTransistors

文件:718.27 Kbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

GeneralPurposeTransistor

文件:182.41 Kbytes Page:4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNGENERALPURPOSEAMPLIFIER

文件:276.18 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNGENERALPURPOSEAMPLIFIER

文件:276.18 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

highCurrentToroidInductors

[J.W.Miller]

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

INTERCONNECTBATTERYHOLDERS

文件:355.08 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

HighCurrentToroidInductors

文件:111.41 Kbytes Page:1 Pages

BournsBourns Electronic Solutions

伯恩斯

Bourns

HighCurrentToroidInductors

文件:111.41 Kbytes Page:1 Pages

BournsBourns Electronic Solutions

伯恩斯

Bourns

HighCurrentToroidInductors

文件:111.41 Kbytes Page:1 Pages

BournsBourns Electronic Solutions

伯恩斯

Bourns

PZT2222产品属性

  • 类型

    描述

  • 型号

    PZT2222

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    NPN Silicon Switching Transistors

更新时间:2025-6-18 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
16+09+
SOT-223
2800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEXPERIA
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
恩XP
20+原装正品
SOT223
6000
大量现货,免费发样。
ON(安森美)
2023+
SOT-223
4550
全新原装正品
24+
SOT223
6000
美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现
ON
24+
SOT223
6800
只做自己库存,全新原装进口正品假一赔百,可开13个点增票
Micro Commercial Co
24+
TO-261-4,TO-261AA
30000
晶体管-分立半导体产品-原装正品
ON
23+
SOT223
50000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON(安森美)
23+
12842
公司只做原装正品,假一赔十
ON
21+
SOT223
50000
十年信誉,只做原装,有挂就有现货!

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