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PVT312LPBF价格
参考价格:¥8.6822
型号:PVT312LPBF 品牌:International 备注:这里有PVT312LPBF多少钱,2026年最近7天走势,今日出价,今日竞价,PVT312LPBF批发/采购报价,PVT312LPBF行情走势销售排行榜,PVT312LPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PVT312LPBF | Series PVT312PbF Microelectronic Power IC HEXFET짰 Power MOSFET Photovoltaic Relay General Description The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace electromechanical relays in many applications. It utilizes International Rectifier’s proprietary HEXFET power MOSFET as the output switch, driven by an integrated circuit photovolt | IRF | ||
PVT312LPBF | 封装/外壳:6-DIP(0.300",7.62mm) 包装:管件 描述:SSR RELAY SPST-NO 170MA 0-250V 继电器 固态继电器 | INFINEON 英飞凌 | ||
PVT312LPBF | 封装/外壳:6-DIP(0.300",7.62mm) 包装:管件 描述:SSR RELAY SPST-NO 170MA 0-250V 继电器 固态继电器 | INFINEON 英飞凌 | ||
PVT312LPBF | Series PVT312PbF Microelectronic Power IC HEXFET® Power MOSFET Photovoltaic Relay | INFINEON 英飞凌 | ||
Sequencing Hotswap Controllers General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro | SUTEX | |||
N-Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss | NTE | |||
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo | STMICROELECTRONICS 意法半导体 | |||
Operational Amplifiers 文件:200.55 Kbytes Page:6 Pages | NSC 国半 |
PVT312LPBF产品属性
- 类型
描述
- 型号
PVT312LPBF
- 功能描述
固态继电器-PCB安装 250V 1 Form A Photo Voltaic Relay
- RoHS
否
- 制造商
Omron Electronics
- 负载电压额定值
40 V
- 负载电流额定值
120 mA
- 触点形式
1 Form A(SPST-NO)
- 输出设备
MOSFET
- 封装/箱体
USOP-4
- 安装风格
SMD/SMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
DIP6 |
45 |
优势 |
|||
IR |
25+ |
DIP-6 |
20000 |
原装 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
Infineon(英飞凌) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
IR |
21+ |
DIP-6 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
22+ |
DIP6 |
3000 |
原装正品,支持实单 |
|||
IR |
25+ |
DIP6 |
20000 |
全新原装正品支持含税 |
|||
Infineon Technologies |
23+ |
6-DIP(0.300,7.62mm) |
1315 |
深圳现货库存/下单即发/原装正品 |
|||
Infineon(英飞凌) |
25+ |
DIP-6 |
48902 |
正规渠道,大量现货,只等你来。 |
PVT312LPBF芯片相关品牌
PVT312LPBF规格书下载地址
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