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PVT312LPBF价格

参考价格:¥8.6822

型号:PVT312LPBF 品牌:International 备注:这里有PVT312LPBF多少钱,2026年最近7天走势,今日出价,今日竞价,PVT312LPBF批发/采购报价,PVT312LPBF行情走势销售排行榜,PVT312LPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PVT312LPBF

Series PVT312PbF Microelectronic Power IC HEXFET짰 Power MOSFET Photovoltaic Relay

General Description The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace electromechanical relays in many applications. It utilizes International Rectifier’s proprietary HEXFET power MOSFET as the output switch, driven by an integrated circuit photovolt

IRF

PVT312LPBF

封装/外壳:6-DIP(0.300",7.62mm) 包装:管件 描述:SSR RELAY SPST-NO 170MA 0-250V 继电器 固态继电器

INFINEON

英飞凌

PVT312LPBF

封装/外壳:6-DIP(0.300",7.62mm) 包装:管件 描述:SSR RELAY SPST-NO 170MA 0-250V 继电器 固态继电器

INFINEON

英飞凌

PVT312LPBF

Series PVT312PbF Microelectronic Power IC HEXFET® Power MOSFET Photovoltaic Relay

INFINEON

英飞凌

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

SUTEX

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

NTE

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

STMICROELECTRONICS

意法半导体

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

STMICROELECTRONICS

意法半导体

Operational Amplifiers

文件:200.55 Kbytes Page:6 Pages

NSC

国半

PVT312LPBF产品属性

  • 类型

    描述

  • 型号

    PVT312LPBF

  • 功能描述

    固态继电器-PCB安装 250V 1 Form A Photo Voltaic Relay

  • RoHS

  • 制造商

    Omron Electronics

  • 负载电压额定值

    40 V

  • 负载电流额定值

    120 mA

  • 触点形式

    1 Form A(SPST-NO)

  • 输出设备

    MOSFET

  • 封装/箱体

    USOP-4

  • 安装风格

    SMD/SMT

更新时间:2026-5-21 18:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
DIP6
45
优势
IR
25+
DIP-6
20000
原装
Infineon(英飞凌)
23+
19850
原装正品,假一赔十
INFINEON/英飞凌
2022+
5000
只做原装,价格优惠,长期供货。
Infineon(英飞凌)
26+
NA
60000
只有原装 可配单
IR
21+
DIP-6
30000
百域芯优势 实单必成 可开13点增值税
IR
22+
DIP6
3000
原装正品,支持实单
IR
25+
DIP6
20000
全新原装正品支持含税
Infineon Technologies
23+
6-DIP(0.300,7.62mm)
1315
深圳现货库存/下单即发/原装正品
Infineon(英飞凌)
25+
DIP-6
48902
正规渠道,大量现货,只等你来。

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