NPN resistor-equipped double transistor

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver

NPN/NPN resistor-equipped transistors; R1 = 22 kOMH, R2 = 22 kOHM

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver

NPN/NPN resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓

PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped double transistor; R1=22kΩ,R2=22kΩ

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN/NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current periphera

丝印代码：H0；NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

1.1 General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications Table 1. Pr

NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

丝印代码：H0；NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Red

丝印代码：H1；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 PNP/PNP complement: PUMB11 2. Features and benefits • 100 mA output current capability • Built-in bias resistors

NPN/NPN resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

NPN resistor-equipped double transistor

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

丝印代码：H1；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Red

50 V, 100 mA NPN/NPN resistor-equipped transistor;

General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces p

NPN/NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = 47 kOHM

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

NPN/NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

丝印代码：H0；NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in a SOT363 (SC-88) very small Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component coun

NPN/NPN resistor-equipped transistors; R1 = 47 k廓, R2 = open

NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistor ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transisto

丝印代码：H1；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD14 PNP/PNP complement: PUMB14 2. Features and benefits • Built-in bias resistors • Simplified circuit design • Reduces co

PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

NPN/PNP resistor-equipped transistors : R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement PNP/PNP complement Package NXP JEITA configuration PE

NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement PNP/PNP complement Package NXP JEITA configuration PE

丝印代码：H2；NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Red

NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement PNP/PNP complement Package NXP JEITA configuration PE

丝印代码：H3；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD16 PNP/PNP complement: PUMB16 2. Features and benefits • Built-in bias resistors • Simplified circuit design • Reduces co

PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

NPN/NPN resistor-equipped transistors;

NPN/NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 22 k廓

PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = 22 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

丝印代码：H5；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD18 PNP/PNP complement: PUMB18 2. Features and benefits • 100 mA output current capability • Built-in bias resistor

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 10 k廓

NPN/NPN resistor-equipped transistors; R1 = 22 k廓, R2 = open

NPN/PNP resistor-equipped transistors

General description NPN/PNP resistor-equipped transistors. Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place cost Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replacement of general-purpose transisto

丝印代码：H6；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD19 PNP/PNP complement: PUMB19 2. Features and benefits • Built-in bias resistors • Simplified circuit design • Reduces co

PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

丝印代码：H2；NPN/NPN resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component coun

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN/NPN resistor-equipped double transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages