PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped double transistor

DESCRIPTION PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package. FEATURES • Transistors with built-in bias resistors R1 and R2 (typ. 10 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and

PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP/PNP double Resistor-Equipped Transistor (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 NPN/NPN complement: PUMH11 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Sim

PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Low VCEsat (BISS) transistors

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PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped Transistors (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces

PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ