位置：首页 > IC中文资料 > PTVA120501EA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PTVA120501EA | Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excelle | WOLFSPEED |   | |
PTVA120501EA | Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz 文件：683.78 Kbytes Page：10 Pages | Cree 科锐 | | |
PTVA120501EA | Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz 文件：1.1438 Mbytes Page：10 Pages | Infineon 英飞凌 | | |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excelle | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excelle | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz 文件：1.1438 Mbytes Page：10 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz 文件：1.1438 Mbytes Page：10 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz 文件：1.1438 Mbytes Page：10 Pages | Infineon 英飞凌 | | ||
包装：散装 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz 文件：1.1438 Mbytes Page：10 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-36265-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | Infineon 英飞凌 | | ||
B - Indoor keyed 文件：91.13 Kbytes Page：4 Pages | LEMO 雷莫电子 | | ||
B - Indoor keyed 文件：79.11 Kbytes Page：4 Pages | LEMO 雷莫电子 | | ||
B - Indoor keyed 文件：92.31 Kbytes Page：4 Pages | LEMO 雷莫电子 | | ||
B - Indoor keyed 文件：224.32 Kbytes Page：5 Pages | LEMO 雷莫电子 | | ||
B - Indoor keyed 文件：222.67 Kbytes Page：5 Pages | LEMO 雷莫电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CREE |
20+ |
SEMI |
20000 |
只做原装.需要联系欧阳’sQQ2851989180/手机号13682 |
|||
Infineon Technologies |
21+ |
- |
20000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON/英飞凌 |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
CREE |
23+ |
晶体管-FET/MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
INFINEON/英飞凌 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
||||
Infineon Technologies |
25+ |
H-36265-2 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
H-36265-2 |
22+ |
56000 |
全新原装进口,假一罚十 |
|||
INFINEON |
23+ |
M0DULE |
8000 |
只做原装现货 |
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PTVA120501EA规格书下载地址
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DdatasheetPDF页码索引
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