Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz

Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provi

Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

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Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

文件：451.11 Kbytes Page：13 Pages

Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz

Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provi

Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz

Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provi

High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz

封装/外壳：H-36265-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET TRANSISTORS 分立半导体产品 晶体管 - FET，MOSFET - 射频

LF Series fuseblock

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MODULAR TELEPHONE JACKS

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