Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz

Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provi

Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

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Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

文件：451.11 Kbytes Page：13 Pages

High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz

The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal perfor ·Input matched\n·Capable of handling 10:1 VSWR @50 V; 200 W (CW) output power\n·Integrated ESD protection\n·Low thermal resistance\n·Pb-free and RoHS compliant;

Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz

Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provi

Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz

Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provi

封装/外壳：H-36265-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET TRANSISTORS 分立半导体产品 晶体管 - FET，MOSFET - 射频

LF Series fuseblock

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MODULAR TELEPHONE JACKS

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