位置：首页 > IC中文资料 > PTVA101K02EV
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PTVA101K02EV | Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exce | WOLFSPEED |   | |
PTVA101K02EV | Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz 文件：1.24606 Mbytes Page：9 Pages | Infineon 英飞凌 | | |
PTVA101K02EV | Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz 文件：359.03 Kbytes Page：9 Pages | Cree 科锐 | | |
PTVA101K02EV | Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz | Infineon 英飞凌 | | |
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exce | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exce | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz 文件：1.24606 Mbytes Page：9 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-36275-4 包装：托盘 描述：IC AMP RF LDMOS H-36275-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz 文件：1.24606 Mbytes Page：9 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz 文件：1.24606 Mbytes Page：9 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz 文件：1.24606 Mbytes Page：9 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-36275-4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
MACOM |
24+ |
5000 |
原装军类可排单 |
||||
Infineon Technologies |
21+ |
- |
20000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
||||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
24+ |
415 |
现货供应 |
||||
Infineon Technologies |
23+ |
8000 |
只做原装现货 |
||||
Cree/Wolfspeed |
100 |
PTVA101K02EV芯片相关品牌
PTVA101K02EV规格书下载地址
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2019-8-23
DdatasheetPDF页码索引
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