High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features • Unmatched input

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package Features • Unmatched inpu

High Power RF LDMOS Field Effect Transistor

High Power RF LDMOS Field Effect Transistor

文件：409.65 Kbytes Page：21 Pages

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

文件：410.88 Kbytes Page：22 Pages

High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz

Unmatched input and outputTypical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHzCapable of handling 1 • Unmatched input and output\n• Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%\n• Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHz\n• Capable;

General Purpose Transistors (700 MHz to 2700 MHz)

High Power RF LDMOS FET, 10W, 28V, 900 – 2700MHz ·Unmatched input and output\n ·Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10W - Gain = 20 dB - Efficiency = 60%\n ·Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR = –44.9 dBc @ 5 MHz\n ;

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package Features • Unmatched inpu

High Power RF LDMOS Field Effect Transistor

文件：409.65 Kbytes Page：21 Pages

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

文件：410.88 Kbytes Page：22 Pages

封装/外壳：10-LDFN 裸露焊盘 包装：卷带（TR） 描述：10W, SI LDMOS, 28V, 700-2700MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

文件：410.88 Kbytes Page：22 Pages

封装/外壳：10-LDFN 裸露焊盘 包装：托盘 描述：RFP-LD10M 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz

文件：410.88 Kbytes Page：22 Pages

SAW Bandpass Filter

文件：196.76 Kbytes Page：5 Pages