High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package Features • Unmatched inpu

封装/外壳：10-LDFN 裸露焊盘 包装：卷带（TR） 描述：10W, SI LDMOS, 28V, 700-2700MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：10-LDFN 裸露焊盘 包装：托盘 描述：RFP-LD10M 分立半导体产品 晶体管 - FET，MOSFET - 射频