High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz

Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features • Unmatched • Typi

High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz

Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifi er applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, effi ciency and linearity performance in a small overmolded plastic package. Features • Unmatched • Ty

High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz

Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifi er applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, effi ciency and linearity performance in a small overmolded plastic package. Features • Unmatched • Ty

High Power RF LDMOS FET 5 W, 28 V, 900 – 2700 MHz

封装/外壳：10-LDFN 裸露焊盘 包装：管件 描述：5W, SI LDMOS, 28V, 700-2700MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

General Purpose Transistors (700 MHz to 2700 MHz)

包装：卷带（TR） 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频