型号 功能描述 生产厂家 企业 LOGO 操作
PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

WOLFSPEED

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET

文件:431.25 Kbytes Page:9 Pages

Infineon

英飞凌

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz

文件:700.2 Kbytes Page:9 Pages

Cree

科锐

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件:655.34 Kbytes Page:9 Pages

Infineon

英飞凌

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件:655.34 Kbytes Page:9 Pages

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

Infineon

英飞凌

High Power RF LDMOS FET28 W, 28 V, 1800 – 2200 MHz

MACOM

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件:655.34 Kbytes Page:9 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件:655.34 Kbytes Page:9 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件:655.34 Kbytes Page:9 Pages

Infineon

英飞凌

封装/外壳:H-37248-4 包装:散装 描述:IC AMP RF LDMOS 分立半导体产品 晶体管 - FET,MOSFET - 射频

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件:655.34 Kbytes Page:9 Pages

Infineon

英飞凌

封装/外壳:H-37248-4 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC AMP RF LDMOS 分立半导体产品 晶体管 - FET,MOSFET - 射频

Infineon

英飞凌

Narrow Block & Bleed, Hard Seat & Soft Seat

文件:588.41 Kbytes Page:4 Pages

NOSHOK

Narrow Block & Bleed, Hard Seat & Soft Seat

文件:588.41 Kbytes Page:4 Pages

NOSHOK

Narrow Block & Bleed, Hard Seat & Soft Seat

文件:588.41 Kbytes Page:4 Pages

NOSHOK

Narrow Block & Bleed, Hard Seat & Soft Seat

文件:588.41 Kbytes Page:4 Pages

NOSHOK

Narrow Block & Bleed, Hard Seat & Soft Seat

文件:588.41 Kbytes Page:4 Pages

NOSHOK

更新时间:2025-12-24 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
INFINEON/英飞凌
23+
TO-59
8510
原装正品代理渠道价格优势
Infineon Technologies
22+
H372484
9000
原厂渠道,现货配单
INFINEON
18+
TO-59
10000
只做原装正品
Infineon Technologies
23+
H372484
8000
只做原装现货
Infineon Technologies
25+
H-37248-4
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MACOM
24+
5000
原装军类可排单
INFINEON/英飞凌
24+
244
现货供应
Infineon Technologies
21+
H-37248-4
20000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务

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