位置：首页 > IC中文资料 > PTFC210202FC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PTFC210202FC | Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r | WOLFSPEED |   | |
PTFC210202FC | Thermally-Enhanced High Power RF LDMOS FET 文件：431.25 Kbytes Page：9 Pages | Infineon 英飞凌 | | |
PTFC210202FC | Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz 文件：700.2 Kbytes Page：9 Pages | Cree 科锐 | | |
PTFC210202FC | Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz 文件：655.34 Kbytes Page：9 Pages | Infineon 英飞凌 | | |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz 文件：655.34 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz 文件：655.34 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz 文件：655.34 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz 文件：655.34 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-37248-4 包装：散装 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz 文件：655.34 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-37248-4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | Infineon 英飞凌 | | ||
MA MOTION SENSOR - Reliable detection hardly influenced by reflectivity of targeted objects - Ready-to-use with DC power source (built-in oscillation circuit type) - Capability to adjoin sensors (External triggering type) - RoHS compliant | Panasonic 松下 | | ||
Single Row Terminal Blocks 文件：1.88296 Mbytes Page：6 Pages | EATON 伊顿 | | ||
Single Row Terminal Blocks 文件：1.88296 Mbytes Page：6 Pages | EATON 伊顿 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
原厂原封□□□ |
20000 |
原厂授权代理分销现货只做原装正迈科技样品支持现货 |
|||
INFINEON/英飞凌 |
H-37248-4 |
22+ |
56000 |
全新原装进口,假一罚十 |
|||
WOLFSPEED/CREE |
23+ |
H-37248-4 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Infineon Technologies |
21+ |
H-37248-4 |
20000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
Infineon Technologies |
22+ |
H372484 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
18+ |
TO-59 |
10000 |
只做原装正品 |
|||
INFINEON |
23+ |
19+ |
8000 |
只做原装现货 |
|||
MACOM |
24+ |
5000 |
原装军类可排单 |
PTFC210202FC规格书下载地址
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DdatasheetPDF页码索引
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