Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

Thermally-Enhanced High Power RF LDMOS FET

Thermally-Enhanced High Power RF LDMOS FET

文件：431.25 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz

文件：700.2 Kbytes Page：9 Pages

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 28 W, 28 V, 1800 – 2200 MHz ·Input matched\n ·Typical CW performance, 2170 MHz, 28 V, combined output - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB\n ·Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Pb-free and RoHS compliant\n ;

High Power RF LDMOS FET28 W, 28 V, 1800 – 2200 MHz

Input matchedTypical CW performance; 2170 MHz; 28 V; combined outputs: Output power at P1dB = 28 W; Efficiency = 62%; Gain = 20.9 dB Capable of handling 10:1 VSWR @28 V; 28 W (CW) output power Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114) Low thermal resistance Pb-free • Input matched \n•Typical CW performance; 2170 MHz; 28 V; combined outputs: Output power at P1dB = 28 W; Efficiency = 62%; Gain = 20.9 dB\n•Capable of handling 10:1 VSWR @28 V; 28 W (CW) output power\n•Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)\n•Low thermal resista;

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior r

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

封装/外壳：H-37248-4 包装：散装 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

封装/外壳：H-37248-4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

Single Row Terminal Blocks

文件：1.88296 Mbytes Page：6 Pages