Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 28 W, 28 V, 1800 – 2200 MHz ·Input matched\n ·Typical CW performance, 2170 MHz, 28 V, combined output - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB\n ·Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Pb-free and RoHS compliant\n ;

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes Page：9 Pages

封装/外壳：H-37248-4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频