High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifi er applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, effi ciency and linearity performance in a small overmolded plastic package. Features • Typical two-carrier WCDMA performance

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features • Typical two-carrier WCDMA performance a

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes Page：21 Pages

High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes Page：21 Pages

封装/外壳：10-LDFN 裸露焊盘 包装：散装 描述：FET RF LDMOS 10W SON10 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS FET,12 W, 28 V, 700 – 2200 MHz

General Purpose Transistors (700 MHz to 2700 MHz)

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes Page：21 Pages

包装：卷带（TR） 描述：RF MOSFET TRANSISTORS 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes Page：21 Pages