6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57 efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960

6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

Universal Hexadecimal Counter

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