0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

0.5-12 GHz Low Noise Gallium Arsenide FET

0.5 – 12 GHz Low Noise Gallium Arsenide FET

Description\nThe ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz freque • Low Noise Figure: 0.5 dB Typical at 4 GHz\n• Low Bias:  VDS= 2 V, IDS␣ =␣ 20 mA\n• High Associated Gain:  13.0 dB Typical at 4 GHz\n• High Output Power:   20.0 dBm Typical P1 dB at 4 GHz\n• Cost Effective Ceramic Microstrip Package\n• Tape-and Reel Packaging Option Available[1];

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57 efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960

Universal Hexadecimal Counter

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