70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION: The ASI PTF10019 is Designed for Cellular, GSM, and D-AMPS applicarions from 860 tp 960 MHz. FEATURES: • 70 W, 860-960 MHz • Internally matched • Omnigold™ Metalization System • Silicon Nitride Passivated

MOS FIELD EFFECT TRANSISTOR

70 Watts, 860?60 MHz GOLDMOS Field Effect Transistor

PNEUFIT 10 series Push-in fittings

> Port size: Ø 4 ... 16 mm O/D tube, ISO G, ISO R, ISO Rc and NPT threads > Very compact units > Easy tube insertion for rapid assembly of pneumatic circuits > Positive tube anchorage > All BSP taper threads pre-coated with non- PTFE based sealant > Straight adaptors feature internal

LSA/LHA SERIES

FEATURES | ® Excellent frequency characteristics. | ® Use of insulating material having superior flame | resistance | ® Available either vertical mounting type, or horizontal | mounting type. | APPLICATIONS | @® Personal computers and peripherals. | @ Digital equipments. | ® Switching

Nylon PCB Supports - Imperial Spacing

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Zero-Insertion-Force DIP Test Socket

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1.00mm PITCH CONNECTOR

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