85 Watts, 1.0 GHz GOLDMOS??Field Effect Transistor

Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at

85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

100MHz, Single and Dual Low Noise, Precision Operational Amplifier

The HCA10009 is a high performance dielectrically isolated, op amp, featuring precision DC characteristics while providing excellent AC characteristics. Designed for audio, video, and other demanding applications, noise (3.4nV/√Hz at 1kHz), total harmonic distortion ( Features • Gain Bandwidth P

IG120 SERIES

Key Features: • Operates With xx962 Drivers • Independent Outputs • EN 60950 Approved • 3,000 VAC Isolation • Miniature SIP Case • >3.5 MHour MTBF • Seven Standard Models • LOW COST!!

IG120 SERIES

Key Features: • Operates With xx962 Drivers • Independent Outputs • EN 60950 Approved • 3,000 VAC Isolation • Miniature SIP Case • >3.5 MHour MTBF • Seven Standard Models • LOW COST!!

Nylon PCB Supports - Imperial Spacing

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Smooth, high torque, roller ratchet handle

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