35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volt

35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

POWER TRANSISTORS(10A,350-400V,150W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE FEATURES * Continuous Collector Current - Ic = 10 A * Switching Regulators * Inverters * Solenoid and Relay Drivers

10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicati

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicati

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

UHF POWER TRANSISTOR

The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics: Output Power — 7.0 Watts Power Gain — 9.0 dB Min, Small–Sig