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PTF价格
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型号：PTF01-152A-103B2 品牌：BOURNS 备注：这里有PTF多少钱，2025年最近7天走势，今日出价，今日竞价，PTF批发/采购报价，PTF行情走势销售排行榜，PTF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PTF | Miniature Power Relay 文件：199.66 Kbytes Page：3 Pages | MACOMTyco Electronics 玛科姆技术方案控股有限公司 |  |   |
PTF | Miniature Power Relay PTF 文件：261.459 Kbytes Page：3 Pages | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | |
PTF | Metal Film Resistors, High Precision, High Stability 文件：156.96 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
PTF | Long Life Slide Potentiometer 文件：544.85 Kbytes Page：7 Pages | BournsBourns Electronic Solutions 伯恩斯 |  | |
PTF | Platinum Thin Film (PTF) Temperature Elements 文件：350.32 Kbytes Page：8 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 |  | |
General Purpose Relay AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC | OMRONOmron Electronics LLC 欧姆龙欧姆龙株式会社 |  | | |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Description ThePTF080101Misanunmatched10-wattGOLDMOS®FETintendedforclassABbasestationapplicationsinthe450MHzto960MHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features •TypicalEDGEperformance -Averageout | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
General Purpose Relay AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC | OMRONOmron Electronics LLC 欧姆龙欧姆龙株式会社 | | | |
General Purpose Relay AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC | OMRONOmron Electronics LLC 欧姆龙欧姆龙株式会社 | | | |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10007isa35WattGOLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat55efficiencyand13.5dBofgain.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28Volt | EricssonEricsson Microelectronics 爱立信爱立信公司 |  | | |
85 Watts, 1.0 GHz GOLDMOS??Field Effect Transistor Description ThePTF10009isan85WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat50efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationareusedtoensureexcellentdevicelifetimeandreliability. •Performanceat | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10015isa50WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom300to960MHz.Itoperatesat55efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationareusedtoensureexcellentdevicelifetimeandreliability. Features | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10019isaninternallymatched,70WattLDMOSFETintendedforcellular,GSM,andD-AMPSapplicationsinthe860to960MHzrange.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION: TheASIPTF10019isDesignedforCellular,GSM,andD-AMPSapplicarionsfrom860tp960MHz. FEATURES: •70W,860-960MHz •Internallymatched •Omnigold™MetalizationSystem •SiliconNitridePassivated | ASI Advanced Semiconductor |  | | |
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10020isaninternallymatched,125WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom860to960MHz.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat960MHz,28Vol | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor Description ThePTF10021isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsinthe1.4to1.6GHzrangesuchasDAB/DAR.Itisratedat30wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizatione | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10031isa50WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat55efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28V | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10036isaninternallymatched,85WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom860to960MHz.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat960MHz,28 | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10043isaninternallymatchedGOLDMOSFETintendedforlargesignalamplifierapplicationsfrom1.9to2.0GHz.Ratedat12watts,itoperatesat45efficiencywith12dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliab | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor Description ThePTF10045isacommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalamplifierapplicationsto1.65GHz.Itisratedat30wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •Perfor | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor Description ThePTF10048isaninternallymatched30–wattGOLDMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itoperatesat40efficiencywith10.5dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNAL | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10052isa35WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat55efficiencyand13.5dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28V | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10053isa12–wattGOLDMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itoperatesat40efficiencywith12dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •GuaranteedPerformance | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor Description ThePTF10065isa30–wattGOLDMOSFETintendedforPCSamplifierapplicationsfrom1.93to1.99GHz.Ittypicallyoperateswith11dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •GuaranteedPe | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
165 Watts, 860-900 MHz LDMOS Field Effect Transistor Description The10100isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalamplifierapplicationsfrom860to900MHz.Itisratedat165wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimea | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10107isa5–wattGOLDMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itoperatesat40efficiencywith11dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •GuaranteedPerformanceat1.99G | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description ThePTF10111isa6wattLDMOSFETintendedforlargesignalamplifierapplicationsto1.5GHz.Itoperates@50efficiencyand16dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat1.5GHz,28Volts | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10112isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itisratedat60wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetime | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Description ThePTF10119isaninternallymatched,commonsource,N-channelenhancement-modelateralMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat12wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicereliability. • | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10120isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itisratedat120wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimea | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Description ThePTF10122isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat50wattspoweroutput,with11dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevice | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor Description ThePTF10125isaninternallymatched,commonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsfrom1.4to1.6GHz,suchasDAB/DRB.Itisratedat135wattsminimumpoweroutpt.Nitridesurfacepassivationandfullgoldmetallization | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10133isaninternallymatched85wattLDMOSFETintendedforcellular,GSMandD-AMPSapplications.Thisdeviceoperatesat50efficiencywith13.5dBofgain.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat8 | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Description ThePTF10134isaninternallymatchedGOLDMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat100wattspoweroutputandoperateswith10dBtypicalgain.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •I | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10135isacommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itisratedat5wattsminimumoutputpower.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability.100 | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10136isa6–wattGOLDMOSFETintendedforlargesignalamplifierapplicationsfromto1.0GHz.Itoperatesat57efficiencywith19dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960 | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10137isa12WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat60efficiencywith18dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28Vo | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10138isa60–wattGOLDMOSFETintendedforamplifierapplicationsto860-960MHz.Itoperatesat48efficiencywith12.5dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28Volts | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10139isaGOLDMOSFETintendedforamplifierapplicationsto860-960MHz.This60–wattdeviceoperatesat55efficiencywith12.5dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960M | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10149isaninternallymatched70–wattGOLDMOSFETintendedforcellularandGSMamplifierapplicationsfrom921to960MHz.Itoperateswith50efficiencyand16dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreli | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description ThePTF10153isaninternallymatched60–wattGOLDMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itoperateswith40efficiencyand11.5dBminimumgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor Description ThePTF10154isaninternallymatched85–wattGOLDMOSFETintendedforCDMAandTDMAapplicationsfrom1.93to1.99GHz.Thisdeviceoperatesat43efficiencywith11dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. • | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10160isaninternallymatched85–wattGOLDMOSFETintendedforcellular,GSM,D-AMPSandEDGEapplications.Itoperateswith53efficiencyand16dBtypicalgain.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performancea | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor Description ThePTF10161isaninternallymatched,165wattGOLDMOSFETintendedforlargesignalamplifierapplicationsfrom869to894MHz.Ittypicallyoperateswith50efficiencyand16dbofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandre | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description ThePTF10139isaGOLDMOSFETintendedforamplifierapplicationsto860-960MHz.This60–wattdeviceoperatesat55efficiencywith12.5dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960M | EricssonEricsson Microelectronics 爱立信爱立信公司 | | | |
12 Watts, 860-960 MHz GOLDMOS??Field Effect Transistor Description ThePTF10193isaninternallymatched,12–wattGOLDMOSFETintendedforGSM,CDMAandTDMAamplifierapplicationsfrom860to960MHz.Thisdeviceoperatesat60efficiencywith18dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifeti | EricssonEricsson Microelectronics 爱立信爱立信公司 | | |
PTF产品属性
- 类型
描述
- 型号
PTF
- 制造商
MA-COM
- 制造商全称
M/A-COM Technology Solutions, Inc.
- 功能描述
Miniature Power Relay
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
H-36265-2 |
5000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
TI/德州仪器 |
24+ |
TQFP100 |
240 |
原装现货假一赔十 |
|||
INFINEON |
1645 |
249 |
公司优势库存 热卖中! |
||||
RESI开步睿思 |
24+ |
DFN |
9865 |
原厂正品全新现货供应 |
|||
MURATA/村田 |
23+ |
DIP-2 |
50000 |
只做原装正品 |
|||
INFINEON |
22+ |
SMD |
3000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
欧姆龙 |
2020+ |
850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
INFINEON/英飞凌 |
21+ |
PG-SON-10 |
9080 |
只做原装,质量保证 |
|||
OMRON/欧姆龙 |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
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- PTF513K0500BYBF
- PTF5110K000AYEK
- PTF45-152B-503B2
- PTF21PC
- PTF14A-E
- PTF14A
- PTF11QDC-WWG26
- PTF11QDC
- PTF11PC
- PTF11A
- PTF08A-E
- PTF08AE
- PTF08A
- PTF08
- PTF01-152A-104B2
- PTF01-152A-103B2
- PTF_09
- PTEA420033P2AD
- PTEA420033N2AD
- PTEA420025P2AD
- PTEA415050N2AD
- PTEA404120P2AD
- PTEA404120N2AD
- PTE60-202A-203B2
- PTE60-202A-105B2
- PTE60-202A-103B2
- PTE60-201B-502B2
- PTE60-201A-504B2
- PTE60-152B-204B2
- PTE60-152B-203B2
- PTE60-152B-104B2
- PTE60-152B-103B2
- PTE60-152A-503B2
- PTE60-152A-104B2
- PTE60-151B-103B2
- PTE60-151B-102B2
- PTE60-121C-103B1
- PTDCC-3
- PTD90
- PTCTZ
- PTCTT
- PTCTL
- PTCSGM3
- PTCSC17
- PTC-NTC
- PTCLL
- PTCEL
- PTC943
- PTC942
- PTC941
- PTC940
- PTC923
- PTC922
- PTC921
- PTC920
- PTC9002
- PTC9001
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2019-10-29
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