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位置：首页 > IC中文资料第8966页 > PTF

PTF价格

参考价格：￥23.1868

型号：PTF01-152A-103B2 品牌：BOURNS 备注：这里有PTF多少钱，2024年最近7天走势，今日出价，今日竞价，PTF批发/采购报价，PTF行情走势销售排行榜，PTF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PTF

Miniature Power Relay

文件：199.66 Kbytes Page：3 Pages

MACOM

Tyco Electronics

MACOM
PTF

Miniature Power Relay PTF

文件：261.459 Kbytes Page：3 Pages

MACOM

Tyco Electronics

MACOM
PTF

Metal Film Resistors, High Precision, High Stability

文件：156.96 Kbytes Page：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
PTF

Long Life Slide Potentiometer

文件：544.85 Kbytes Page：7 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
PTF

Platinum Thin Film (PTF) Temperature Elements

文件：350.32 Kbytes Page：8 Pages

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC
PTF08

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF080101

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080101M

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description ThePTF080101Misanunmatched10-wattGOLDMOS®FETintendedforclassABbasestationapplicationsinthe450MHzto960MHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features •TypicalEDGEperformance -Averageout

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080101S

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080101S

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080451

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080451E

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601A

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601E

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601F

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080901

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080901E

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080901F

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF081301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF081301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF08A

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF10007

35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10007isa35WattGOLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat55efficiencyand13.5dBofgain.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28Volt

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10009

85 Watts, 1.0 GHz GOLDMOS??Field Effect Transistor

Description ThePTF10009isan85WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat50efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationareusedtoensureexcellentdevicelifetimeandreliability. •Performanceat

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10015

50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10015isa50WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom300to960MHz.Itoperatesat55efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationareusedtoensureexcellentdevicelifetimeandreliability. Features

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10019

70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10019isaninternallymatched,70WattLDMOSFETintendedforcellular,GSM,andD-AMPSapplicationsinthe860to960MHzrange.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10019

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION: TheASIPTF10019isDesignedforCellular,GSM,andD-AMPSapplicarionsfrom860tp960MHz. FEATURES: •70W,860-960MHz •Internallymatched •Omnigold™MetalizationSystem •SiliconNitridePassivated

ASI

Advanced Semiconductor, Inc

ASI
PTF10020

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10020isaninternallymatched,125WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom860to960MHz.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat960MHz,28Vol

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10021

30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description ThePTF10021isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsinthe1.4to1.6GHzrangesuchasDAB/DAR.Itisratedat30wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizatione

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10031

50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10031isa50WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat55efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28V

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10036

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10036isaninternallymatched,85WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom860to960MHz.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat960MHz,28

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10043

12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10043isaninternallymatchedGOLDMOSFETintendedforlargesignalamplifierapplicationsfrom1.9to2.0GHz.Ratedat12watts,itoperatesat45efficiencywith12dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliab

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10045

30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor

Description ThePTF10045isacommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalamplifierapplicationsto1.65GHz.Itisratedat30wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •Perfor

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10048

30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

Description ThePTF10048isaninternallymatched30–wattGOLDMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itoperatesat40efficiencywith10.5dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNAL

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10052

35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10052isa35WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat55efficiencyand13.5dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28V

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10053

12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10053isa12–wattGOLDMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itoperatesat40efficiencywith12dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •GuaranteedPerformance

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10065

30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

Description ThePTF10065isa30–wattGOLDMOSFETintendedforPCSamplifierapplicationsfrom1.93to1.99GHz.Ittypicallyoperateswith11dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •GuaranteedPe

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10100

165 Watts, 860-900 MHz LDMOS Field Effect Transistor

Description The10100isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalamplifierapplicationsfrom860to900MHz.Itisratedat165wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimea

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10107

5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10107isa5–wattGOLDMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itoperatesat40efficiencywith11dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •GuaranteedPerformanceat1.99G

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10111

6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

Description ThePTF10111isa6wattLDMOSFETintendedforlargesignalamplifierapplicationsto1.5GHz.Itoperates@50efficiencyand16dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat1.5GHz,28Volts

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10112

60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10112isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itisratedat60wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetime

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10119

12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description ThePTF10119isaninternallymatched,commonsource,N-channelenhancement-modelateralMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat12wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicereliability. •

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10120

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10120isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itisratedat120wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimea

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10122

50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description ThePTF10122isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat50wattspoweroutput,with11dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevice

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10125

135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description ThePTF10125isaninternallymatched,commonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsfrom1.4to1.6GHz,suchasDAB/DRB.Itisratedat135wattsminimumpoweroutpt.Nitridesurfacepassivationandfullgoldmetallization

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10133

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10133isaninternallymatched85wattLDMOSFETintendedforcellular,GSMandD-AMPSapplications.Thisdeviceoperatesat50efficiencywith13.5dBofgain.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performanceat8

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10134

100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description ThePTF10134isaninternallymatchedGOLDMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat100wattspoweroutputandoperateswith10dBtypicalgain.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. •I

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10135

5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10135isacommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itisratedat5wattsminimumoutputpower.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability.100

EricssonEricsson Microelectronics

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Ericsson
PTF10136

6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10136isa6–wattGOLDMOSFETintendedforlargesignalamplifierapplicationsfromto1.0GHz.Itoperatesat57efficiencywith19dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10137

12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10137isa12WattLDMOSFETintendedforlargesignalamplifierapplicationsto1.0GHz.Itoperatesat60efficiencywith18dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28Vo

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10138

60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10138isa60–wattGOLDMOSFETintendedforamplifierapplicationsto860-960MHz.Itoperatesat48efficiencywith12.5dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960MHz,28Volts

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10139

60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10139isaGOLDMOSFETintendedforamplifierapplicationsto860-960MHz.This60–wattdeviceoperatesat55efficiencywith12.5dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960M

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10149

70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10149isaninternallymatched70–wattGOLDMOSFETintendedforcellularandGSMamplifierapplicationsfrom921to960MHz.Itoperateswith50efficiencyand16dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreli

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10153

60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10153isaninternallymatched60–wattGOLDMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itoperateswith40efficiencyand11.5dBminimumgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability.

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10154

85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

Description ThePTF10154isaninternallymatched85–wattGOLDMOSFETintendedforCDMAandTDMAapplicationsfrom1.93to1.99GHz.Thisdeviceoperatesat43efficiencywith11dBgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10160

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10160isaninternallymatched85–wattGOLDMOSFETintendedforcellular,GSM,D-AMPSandEDGEapplications.Itoperateswith53efficiencyand16dBtypicalgain.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. •INTERNALLYMATCHED •Performancea

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10161

165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

Description ThePTF10161isaninternallymatched,165wattGOLDMOSFETintendedforlargesignalamplifierapplicationsfrom869to894MHz.Ittypicallyoperateswith50efficiencyand16dbofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandre

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10162

18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10139isaGOLDMOSFETintendedforamplifierapplicationsto860-960MHz.This60–wattdeviceoperatesat55efficiencywith12.5dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. •Performanceat960M

EricssonEricsson Microelectronics

爱立信

Ericsson
PTF10193

12 Watts, 860-960 MHz GOLDMOS??Field Effect Transistor

Description ThePTF10193isaninternallymatched,12–wattGOLDMOSFETintendedforGSM,CDMAandTDMAamplifierapplicationsfrom860to960MHz.Thisdeviceoperatesat60efficiencywith18dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifeti

EricssonEricsson Microelectronics

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Ericsson

PTF产品属性

  • 类型

    描述

  • 型号

    PTF

  • 制造商

    MA-COM

  • 制造商全称

    M/A-COM Technology Solutions, Inc.

  • 功能描述

    Miniature Power Relay

PTF供应商更多...

更新时间：2024-6-21 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市杰顺创科技有限公司
PTFA091201E
英飞凌 | Infineon
21+
SOT-502A
4550
全新原装现货
询价
上海意淼电子科技有限公司
PTF210301E
INFINEON
23+
高频
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
PTFA211801E
INFINEON
2018+
NI-787
6000
全新原装正品现货,假一赔佰
询价
中天科工半导体（深圳）有限公司
PTFC270101M-V1-R1K
Wolfspeed, Inc.
24+
10-LDFN 裸露焊盘
30000
晶体管-分立半导体产品-原装正品
询价
深圳市明嘉莱科技有限公司
PTF56100R00BZEB
VISHAY/威世
24+
NA
860000
明嘉莱只做原装正品现货
询价
深圳市华睿芯科技有限公司
PTF10193
INFINEON
23+
MODL
20000
原厂原装正品现货
询价
深圳市正迈科技有限公司
PTF14A-E
OMRON 欧姆龙
23+
原封 原厂
10501
现货原装--电子元件更多数量咨询/样品批量支持 OMRO
询价
深圳市威雅利发展有限公司
PTFP7455PZP
TI
02+
TQFP
23
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市宝芯创电子有限公司
PTF08A-E
OMRON/欧姆龙
2018+
DIP
6200
假一罚十/本公司只做原装正品
询价
深圳市弘扬芯城科技有限公司
PTF-15
XFCN(兴飞)
23+
6000
诚信服务，绝对原装原盘
询价

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