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型号 功能描述 生产厂家 企业 LOGO 操作
PTC423P

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)

MICROSEMI

美高森美

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

PHILIPS

飞利浦

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

PHILIPS

飞利浦

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

MOTOROLA

摩托罗拉

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

ONSEMI

安森美半导体

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

ONSEMI

安森美半导体

PTC423P产品属性

  • 类型

    描述

  • 型号

    PTC423P

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    NPN Darlington Transistors

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