175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor

Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliab

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz. FEATURES: • 175 W, 470-860 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System

175 Watts P-Sync, 470–860 MHz UHF TV Power Transistor

Description\nThe 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliabil

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz.FEATURES:\n• 175 W, 470-860 MHz\n• Silicon Nitride Passivated\n• Omnigold™ Metalization System

HIGH FREQUENCY CERAMIC CAPACITORS

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HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

20W TO-220 HIGH POWER RESISTORS

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