4 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metal

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

HIGH SENSITIVITY RELAY WITH GUARANTEED LOW LEVEL SWITCHING CAPACITY

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