Description

The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 4 Watts, 860–900 MHz

• Class AB Characteristics

• 50 Collector Efficiency at 4 Watts

• Gold Metallization

• Silicon Nitride Passivated